 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Transistors with built-in Resistor UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z (UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/511D/511E/511F/ 511H/511L/511M/511N/511T/511V/511Z) Unit: mm Silicon PNP epitaxial planer transistor For digital circuits 2.00.2 1.30.1 0.425 2.10.1 1.250.1 0.425 0.65 I Features G G 0.65 1 Costs can be reduced through downsizing of the equipment and reduction of the number of parts. S-Mini type package, allowing automatic insertion through tape packing and magazine packing. 3 2 0.2 I Resistance by Part Number G G G G G G G G G G G G G G G G G G G G 0.90.1 Marking Symbol UNR5111 6A UNR5112 6B UNR5113 6C UNR5114 6D UNR5115 6E UNR5116 6F UNR5117 6H UNR5118 6I UNR5119 6K UNR5110 6L UNR511D 6M UNR511E 6N UNR511F 6O UNR511H 6P UNR511L 6Q UNR511M EI UNR511N EW UNR511T EY UNR511V FC UNR511Z FE (R1) 10k 22k 47k 10k 10k 4.7k 22k 0.51 1k 47k 47k 47k 4.7k 2.2k 4.7k 2.2k 4.7k 22k 2.2k 4.7k (R2) 10k 22k 47k 47k -- -- -- 5.1k 10k -- 10k 22k 10k 10k 4.7k 47k 47k 47k 2.2k 22k 0.70.1 0 to 0.1 0.20.1 1 : Base 2 : Emitter 3 : Collector EIAJ : SC-70 S-Mini Type Package Internal Connection R1 C B R2 E I Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25C) Ratings -50 -50 -100 150 150 -55 to +150 Unit V V mA mW C C Note.) The Part numbers in the Parenthesis show conventional part number. 0.15 -0.05 +0.1 0.3 -0 +0.1 1 UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z I Electrical Characteristics Parameter Collector cutoff current UNR5111 UNR5112/5114/511E/511D/511M/511N/511T UNR5113 Emitter cutoff current UNR5115/5116/5117/5110 UNR511F/511H UNR5119 UNR5118/511L/511V UNR511Z Collector to base voltage UNR511N/511T/511V/511Z Collector to emitter voltage UNR511N/511T UNR5111 UNR5112/511E UNR5113/5114/511M Forward current transfer ratio UNR5115*/5116*/5117*/5110* UNR511F/511D/5119/511H UNR5118/511L UNR511N/511T UNR511V UNR511Z Collector to emitter saturation voltage UNR511V Output voltage high level Output voltage low level UNR5113 UNR511D UNR511E Transition frequency UNR511Z UNR5111/5114/5115 UNR5112/5117/511T UNR5113/5110/511D/511E Input resistance UNR5116/511F/511L/511N/511Z UNR5118 UNR5119 UNR511H/511M/511V (Ta=25C) Symbol ICBO ICEO Conditions VCB = -50V, IE = 0 VCE = -50V, IB = 0 min typ max - 0.1 - 0.5 - 0.5 - 0.2 - 0.1 IEBO VEB = -6V, IC = 0 - 0.01 -1.0 -1.5 -2.0 - 0.4 VCBO VCEO IC = -10A, IE = 0 IC = -2mA, IB = 0 -50 -50 -50 -50 35 60 80 160 hFE VCE = -10V, IC = -5mA 30 20 80 6 0 VCE(sat) VOH IC = -10mA, IB = - 0.3mA IC = -10mA, IB = -1.5mA VCC = -5V, VB = - 0.5V, RL = 1k VCC = -5V, VB = -2.5V, RL = 1k VOL VCC = -5V, VB = -3.5V, RL = 1k VCC = -5V, VB = -10V, RL = 1k VCC = -5V, VB = -6V, RL = 1k fT VCB = -10V, IE = 1mA, f = 200MHz VCB = -10V, IE = 1mA, f = 200MHz 80 150 10 22 47 R1 (-30%) 4.7 0.51 1 2.2 (+30%) k -4.9 - 0.2 - 0.2 - 0.2 - 0.2 MHz V 400 20 200 - 0.25 - 0.25 V V 460 V mA Unit A A V * hFE rank classification (UNR5115/5116/5117/5110) Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460 2 UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z I Electrical Characteristics (continued) Parameter UNR5111/5112/5113/511L UNR5114 UNR5118/5119 UNR511D Resistance ratio UNR511E UNR511F/511T UNR511H UNR511M UNR511N UNR511V UNR511Z R1/R2 Symbol (Ta=25C) Conditions min 0.8 0.17 0.08 typ 1.0 0.21 0.1 4.7 2.14 0.47 0.17 0.22 0.047 0.1 1.0 0.21 0.27 max 1.2 0.25 0.12 Unit 3 UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Common characteristics chart PT -- Ta 240 Total power dissipation PT (mW) 200 160 120 80 40 0 0 40 80 120 160 Ambient temperature Ta (C) Characteristics charts of UNR5111 IC -- VCE -160 -140 IB=-1.0mA Ta=25C -100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 160 VCE=-10V hFE -- IC Ta=75C -30 -10 -3 -1 -0.3 -0.1 -25C -0.03 -0.01 -0.1 -0.3 Ta=75C Collector current IC (mA) -0.9mA -120 -100 -80 -60 -0.3mA -40 -0.2mA -20 -0.1mA 0 0 -2 -4 -6 -8 -10 -12 -0.8mA -0.7mA -0.6mA -0.5mA -0.4mA Forward current transfer ratio hFE 25C 120 -25C 80 25C 40 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C VIN -- IO VO=-5V Ta=25C -100 -30 VO=-0.2V Ta=25C -10000 -3000 Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) -1000 -300 -100 -30 -10 -3 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 4 UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Characteristics charts of UNR5112 IC -- VCE -160 -140 Ta=25C IB=-1.0mA -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -80 -60 -40 -20 0 0 -2 -4 -6 -8 -10 -12 -0.4mA -0.3mA -0.2mA -0.1mA -100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 hFE -- IC 400 VCE=-10V -30 -10 -3 -1 -0.3 -0.1 -25C -0.03 -0.01 -0.1 -0.3 Forward current transfer ratio hFE Collector current IC (mA) -120 -100 300 Ta=75C 200 25C -25C 100 25C Ta=75C -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C -10000 -3000 VO=-5V Ta=25C VIN -- IO -100 -30 VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) -1000 -300 -100 -30 -10 -3 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR5113 IC -- VCE -160 IB=-1.0mA -140 VCE(sat) -- IC -100 hFE -- IC IC/IB=10 400 VCE=-10V Ta=25C Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA) -120 -100 -80 -60 -40 -20 0 0 -2 -4 -6 -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -30 -10 -3 -1 -0.3 -0.1 -25C -0.03 -0.01 -0.1 -0.3 Ta=75C Forward current transfer ratio hFE 300 Ta=75C 25C 200 -25C -0.4mA -0.3mA -0.2mA 25C 100 -0.1mA -8 -10 -12 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 5 UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C -10000 -3000 VO=-5V Ta=25C -100 -30 VIN -- IO VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 -300 -100 -30 -10 -3 Input voltage VIN (V) -0.6 -0.8 -1.0 -1.2 -1.4 -1000 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR5114 IC -- VCE -160 -100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 400 hFE -- IC VCE=-10V IB=-1.0mA -30 -10 -3 -1 -0.3 -0.1 -0.03 -25C -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 25C Ta=75C Collector current IC (mA) -120 -100 -80 -60 -40 -20 0 0 -2 -4 -6 -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -0.4mA -0.3mA -0.2mA -0.1mA Forward current transfer ratio hFE -140 300 Ta=75C 200 25C -25C 100 -8 -10 -12 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C -10000 -3000 VO=-5V Ta=25C -1000 -300 VIN -- IO VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) -1000 -300 -100 -30 -10 -3 -100 -30 -10 -3 -1 -0.3 -0.1 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 6 UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Characteristics charts of UNR5115 IC -- VCE -160 -100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 400 Ta=25C hFE -- IC VCE=-10V Collector current IC (mA) -120 -100 -80 -60 -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -0.4mA -0.3mA -0.2mA -10 -3 -1 -0.3 -0.1 -0.03 -25C -0.01 -0.1 -0.3 -1 25C Ta=75C Forward current transfer ratio hFE -140 IB=-1.0mA -30 300 Ta=75C 200 25C -25C 100 -40 -0.1mA -20 0 0 -2 -4 -6 -8 -10 -12 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C -10000 -3000 VO=-5V Ta=25C -100 -30 VIN -- IO VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 -300 -100 -30 -10 -3 Input voltage VIN (V) -0.6 -0.8 -1.0 -1.2 -1.4 -1000 -10 -3 -1 -0.3 -0.1 3 2 1 -0.03 -0.01 -0.1 -0.3 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR5116 IC -- VCE -160 -100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 400 -30 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 25C Ta=75C hFE -- IC VCE=-10V Collector current IC (mA) -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -120 -100 -80 -60 -40 -20 0 0 -2 -4 -6 -8 Forward current transfer ratio hFE -140 IB=-1.0mA 300 Ta=75C -0.4mA -0.3mA -0.2mA 200 25C -25C 100 -0.1mA -25C -10 -12 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 7 UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C VIN -- IO VO=-5V Ta=25C -100 -30 VO=-0.2V Ta=25C -10000 -3000 Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) -0.6 -0.8 -1.0 -1.2 -1.4 -1000 -300 -100 -30 -10 -3 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR5117 IC -- VCE -120 -100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 400 hFE -- IC VCE=-10V -100 Collector current IC (mA) -80 IB=-1.0mA -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -0.4mA -10 -3 -1 -0.3 -0.1 -25C -0.03 -0.01 -0.1 -0.3 25C Ta=75C Forward current transfer ratio hFE -30 300 -60 -0.3mA -0.2mA -20 -0.1mA 200 Ta=75C -40 25C 100 -25C 0 0 -2 -4 -6 -8 -10 -12 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 -10000 IO -- VIN f=1MHz IE=0 Ta=25C VO=-5V Ta=25C -100 -30 VIN -- IO VO=-0.2V Ta=25C Collector output capacitance Cob (pF) -3000 5 Output current IO (A) 4 -300 -100 -30 -10 -3 Input voltage VIN (V) -0.6 -0.8 -1.0 -1.2 -1.4 -1000 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 8 UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Characteristics charts of UNR5118 IC -- VCE -240 -100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 160 hFE -- IC VCE=-10V -200 -30 -10 -3 -1 Ta=75C -0.3 25C -0.1 -0.03 -25C IB=-1.0mA -0.9mA -160 -0.8mA -0.7mA -120 -0.6mA -0.5mA -0.4mA -0.3mA -40 -0.2mA -0.1mA 0 0 -2 -4 -6 -8 -10 -12 Forward current transfer ratio hFE Collector current IC (mA) 120 Ta=75C 80 25C -25C 40 -80 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C -10000 -3000 VO=-5V Ta=25C -100 -30 VIN -- IO VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 -300 -100 -30 -10 -3 Input voltage VIN (V) -0.6 -0.8 -1.0 -1.2 -1.4 -1000 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR5119 IC -- VCE -240 -100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 160 -30 -10 -3 -1 -0.3 25C -0.1 -0.03 -25C hFE -- IC VCE=-10V -200 Forward current transfer ratio hFE Collector current IC (mA) -160 IB=-1.0mA -0.9mA -0.8mA -0.7mA 120 Ta=75C 80 25C -25C -120 Ta=75C -80 -0.6mA -0.5mA -0.4mA -0.3mA -0.2mA -0.1mA 0 -2 -4 -6 -8 -10 -12 40 -40 0 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 9 UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Cob -- VCB 6 -10000 f=1MHz IE=0 Ta=25C -3000 IO -- VIN VO=-5V Ta=25C -100 -30 VIN -- IO VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) -0.6 -0.8 -1.0 -1.2 -1.4 -1000 -300 -100 -30 -10 -3 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR5110 IC -- VCE -120 -100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 400 hFE -- IC VCE=-10V -30 -10 -3 -1 Ta=75C -0.3 -0.1 -0.03 -25C 25C Forward current transfer ratio hFE Collector current IC (mA) Ta=25C IB=-1.0mA -0.9mA -100 -0.8mA -0.7mA -0.6mA -0.5mA -80 -0.4mA -0.3mA -60 -0.2mA -40 -0.1mA -20 300 Ta=75C 200 25C -25C 100 0 0 -2 -4 -6 -8 -10 -12 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 -10000 f=1MHz IE=0 Ta=25C -3000 IO -- VIN VO=-5V Ta=25C VIN -- IO -100 -30 VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 -300 -100 -30 -10 -3 Input voltage VIN (V) -0.6 -0.8 -1.0 -1.2 -1.4 -1000 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 10 UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Characteristics charts of UNR511D IC -- VCE -60 VCE(sat) -- IC -100 hFE -- IC IC/IB=10 160 VCE=-10V Collector to emitter saturation voltage VCE(sat) (V) -50 -30 -10 -3 -1 -0.3 25C -0.1 -0.03 -25C Ta=75C Forward current transfer ratio hFE IB=-1.0mA -0.9mA -0.8mA Ta=25C Collector current IC (mA) 120 Ta=75C -40 -0.3mA -30 -0.2mA -0.7mA -0.6mA -0.5mA -0.4mA -0.1mA -10 25C 80 -25C -20 40 0 0 -2 -4 -6 -8 -10 -12 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C -10000 -3000 VO=-5V Ta=25C -100 -30 VIN -- IO VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 -300 -100 -30 -10 -3 Input voltage VIN (V) -2.0 -2.5 -3.0 -3.5 -4.0 -1000 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -1.5 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR511E IC -- VCE -60 VCE(sat) -- IC -100 hFE -- IC IC/IB=10 400 VCE=-10V Collector to emitter saturation voltage VCE(sat) (V) -50 -10 -3 -1 -0.3 -0.1 -0.03 -25C Forward current transfer ratio hFE IB=-1.0mA -0.9mA -0.8mA -0.7mA Ta=25C -30 Collector current IC (mA) 300 -40 -0.3mA -30 -0.6mA -0.5mA -0.4mA -0.2mA Ta=75C 25C 200 Ta=75C 100 25C -25C -20 -0.1mA -10 0 0 -2 -4 -6 -8 -10 -12 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 11 UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Cob -- VCB 6 -10000 f=1MHz IE=0 Ta=25C -3000 IO -- VIN VO=-5V Ta=25C -100 -30 VIN -- IO VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 -300 -100 -30 -10 -3 Input voltage VIN (V) -2.0 -2.5 -3.0 -3.5 -4.0 -1000 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -1.5 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR511F IC -- VCE -240 -100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 160 hFE -- IC VCE=-10V -200 Collector current IC (mA) -160 IB=-1.0mA -0.9mA -0.8mA -0.7mA -0.6mA -30 -10 -3 -1 Ta=75C -0.3 25C -0.1 -0.03 Forward current transfer ratio hFE 120 Ta=75C 25C 80 -25C -120 -0.5mA -80 -0.4mA -0.3mA -40 -0.2mA -0.1mA 0 -2 -4 -6 -8 -10 -12 40 -25C 0 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C -10000 -3000 VO=-5V Ta=25C -100 -30 VIN -- IO VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) -1000 -300 -100 -30 -10 -3 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 12 UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Characteristics charts of UNR511H IC -- VCE -120 VCE(sat) -- IC -100 hFE -- IC IC/IB=10 240 VCE= -10V Collector to emitter saturation voltage VCE(sat) (V) Ta=25C -100 Forward current transfer ratio hFE 200 Collector current IC (mA) -10 -80 IB=-0.5mA -0.4mA 160 Ta=75C 120 25C 80 -25C 40 -60 -0.3mA -40 -0.2mA -20 -0.1mA 0 0 -2 -4 -6 -8 -10 -12 -1 Ta=75C 25C -0.1 -25C -0.01 -1 -3 -10 -30 -100 -300 -1000 0 -0.1 -0.3 -1 -3 -10 -30 -100 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 VIN -- IO f=1MHz IE=0 Ta=25C -100 VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 4 Input voltage VIN (V) -10 3 -1 2 -0.1 1 0 -1 -3 -10 -30 -100 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Output current IO (mA) Characteristics charts of UNR511L IC -- VCE -240 VCE(sat) -- IC -100 hFE -- IC IC/IB=10 240 VCE=-10V Collector to emitter saturation voltage VCE(sat) (V) Ta=25C -200 Forward current transfer ratio hFE -30 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -1 Ta=75C 25C -25C 200 Collector current IC (mA) -160 IB=-1.0mA -0.8mA -80 -0.6mA -0.4mA -0.2mA 0 0 -2 -4 -6 -8 -10 -12 160 -120 120 Ta=75C 25C -25C 80 -40 40 -3 -10 -30 -100 -300 -1000 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 13 UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Cob -- VCB 6 VIN -- IO f=1MHz IE=0 Ta=25C -100 VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 4 Input voltage VIN (V) -10 3 -1 2 -0.1 1 0 -1 -3 -10 -30 -100 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Output current IO (mA) Characteristics charts of UNR511M IC -- VCE 240 VCE(sat) -- IC -10 hFE -- IC IC/IB=10 500 VCE=-10V Collector to emitter saturation voltage VCE(sat) (V) Ta=25C 200 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.003 -0.001 -1 25C Ta=75C Forward current transfer ratio hFE Collector current IC (mA) 160 IB=-1.0mA -0.9mA -0.8mA -0.7mA -0.6mA 400 300 120 200 Ta=75C 25C -25C 80 -0.5mA -0.4mA -0.3mA -25C 40 100 -0.2mA -0.1mA 0 0 -2 -4 -6 -8 -10 -12 -3 -10 -30 -100 -300 -1000 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 10 IO -- VIN 10-4 f=1MHz IE=0 Ta=25C VIN -- IO VO=-5V Ta=25C -100 -30 VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 8 Output current IO (A) Input voltage VIN (V) 10-3 -10 -3 -1 -0.3 -0.1 -0.03 6 10-2 4 10-1 2 0 -0.1 -0.3 -1 -3 -10 -30 -100 1 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 14 UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Characteristics charts of UNR511N IC -- VCE -200 Ta=25C -175 VCE(sat) -- IC -10 hFE -- IC IC/IB=10 300 VCE=-10V Collector to emitter saturation voltage VCE(sat) (V) Forward current transfer ratio hFE 250 Ta=75C 200 25C 150 Collector current IC (mA) -150 -125 -100 -75 -50 -25 IB=-1.0mA -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -0.4mA -0.3mA -0.2mA -0.1mA -1 Ta=75C -0.1 25C -25C -25C 100 50 0 0 -2 -4 -6 -8 -10 -12 -0.01 -1 -10 -100 -1000 0 -1 -10 -100 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C -10000 VO=-5V Ta=25C -100 VIN -- IO VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 3 -100 Input voltage VIN (V) -0.6 -0.8 -1.0 -1.2 -1.4 -1000 -10 -1 2 -10 -0.1 1 0 -1 -10 -100 -1 -0.4 -0.01 -0.1 -1 -10 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR511T IC -- VCE -200 Ta=25C -175 -10 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 300 hFE -- IC VCE=-10V Forward current transfer ratio hFE 250 Ta=75C 200 25C 150 -25C 100 Collector current IC (mA) -150 IB=-1.0mA -125 -100 -75 -50 -25 0 0 -2 -4 -6 -8 -10 -12 -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -0.4mA -0.3mA -0.2mA -0.1mA -1 Ta=75C -0.1 25C -25C 50 -0.01 -1 -10 -100 -1000 0 -1 -10 -100 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 15 UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z IO -- VIN -10000 VO=-5V Ta=25C -100 VIN -- IO VO=-0.2V Ta=25C Output current IO (A) -100 Input voltage VIN (V) -0.6 -0.8 -1 -1.2 -1.4 -1000 -10 -1 -10 -0.1 -1 -0.4 -0.01 -0.1 -1 -10 -100 Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR511V IC -- VCE -12 VCE(sat) -- IC -10 hFE -- IC IC/IB=10 12 VCE=-10V Collector to emitter saturation voltage VCE(sat) (V) Ta=25C -10 IB=-1.0mA -0.9mA -8 -0.8mA -0.7mA -6 -0.6mA -0.5mA -4 -0.4mA -0.3mA -2 -0.2mA 0 0 -2 -4 -6 -8 -0.1mA -10 -12 Forward current transfer ratio hFE Ta=75C 10 25C 8 -25C Collector current IC (mA) -1 Ta=75C 25C -0.1 -25C 6 4 2 -0.01 -1 -10 -100 -1000 0 -1 -10 -100 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) IO -- VIN -10000 VO=-5V Ta=25C -100 VIN -- IO VO=-0.2V Ta=25C Output current IO (A) Input voltage VIN (V) -0.6 -0.8 -1 -1.2 -1.4 -1000 -10 -100 -1 -10 -0.1 -1 -0.4 -0.01 -0.1 -1 -10 -100 Input voltage VIN (V) Output current IO (mA) 16 UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Characteristics charts of UNR511Z IC -- VCE -200 Ta=25C -175 VCE(sat) -- IC -10 hFE -- IC IC/IB=10 300 VCE=-10V Collector to emitter saturation voltage VCE(sat) (V) Forward current transfer ratio hFE 250 Collector current IC (mA) -150 IB=-1.0mA -125 -100 -75 -50 -25 0 0 -2 -4 -6 -8 -10 -12 -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -0.4mA -0.3mA -0.2mA -0.1mA -1 200 25C 150 Ta=75C Ta=75C -0.1 25C -25C 100 -25C 50 -0.01 -1 -10 -100 -1000 0 -1 -10 -100 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C -10000 VO=-5V Ta=25C -100 VIN -- IO VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 3 Input voltage VIN (V) -0.6 -0.8 -1 -1.2 -1.4 -1000 -10 -100 -1 2 -10 -0.1 1 0 -1 -10 -100 -1 -0.4 -0.01 -0.1 -1 -10 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 17 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR |
Price & Availability of UN5112
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |